To develop indium phosphide heterojunction bipolar transistors

February 8, 2001

1 Min Read

TAUNTON, Mass. -- Kopin Corporation (NASDAQ: KOPN), the leading provider of heterojunction bipolar transistors (HBTs) for wireless and fiber-optic telecom applications, announced that today it has entered into a Joint Development Agreement with Rockwell Science Center (RSC) of Thousand Oaks, California, a leader in the development of ultra-high-speed device and circuit technologies and advanced HBT technologies. The purpose of the agreement is to accelerate the development of indium phosphide (InP)-based HBTs for commercial applications. The agreement calls for Kopin to develop InP-based HBT structures and for RSC to create processing technologies for devices and circuits as well as to establish the long-term reliability of InP HBTs.

"Rockwell Science Center pioneered the development of HBT technology, and we are very pleased to partner with this distinguished organization," said Dr. John C.C. Fan, Kopin's president and chief executive officer. "RSC combines an excellent team of R&D scientists and engineers with world-class expertise in high-speed devices and circuits. Several years ago, Kopin and Rockwell co-developed commercial GaAs-based HBT power amplifiers for wireless phones. We are delighted to combine forces again as we focus on accelerating the introduction of InP HBTs into the commercial marketplace. This agreement comes only a month after our introduction of carbon-doped InP HBTs for use in wireless and high-speed optical communication. Our partnership with RSC will provide rapid advances in the fundamental material and device technologies, while Kopin will continue to work with its customers on commercial applications."

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