CAMARILLO, Calif. -- Vitesse Semiconductor Corporation (NASDAQ:VTSS) today announced the availability of its Indium Phosphide foundry services for designers of next generation high performance integrated circuits (ICs) and optoelectronic integrated circuits (OEICs). Vitesse's Indium Phosphide (VIP) is ideally suited for fiber-based networks, including SONET OC-768 and 100Gb/s Ethernet, wireless and RF applications, or any application requiring the mutual benefits of very high gain bandwidth product and high breakdown voltage. Vitesse currently uses VIP for the fabrication of its own line of fiber-based network products and is now making this high-performance technology available to foundry customers."Our InP process is ideally suited to the fabrication of ICs with high breakdown voltage and fast edge rates needed for 40+Gb/s network equipment. Peak transistor performance is achieved at low current density for superior thermal management," stated Alan Huelsman, director of Vitesse's InP Program. With Vitesse's InP process, customers can obtain performance that isn't available in SiGe, CMOS, or other commercially available III-V processes. "We've done work in several other commercially available technologies and found that our internal InP process is substantially more capable in terms of performance, yield, and manufacturability," continued Huelsman. Vitesse Semiconductor Corp.