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TI Unveils SiGe Process

Industry's first complementary Silicon-Germanium process increases speed by 3X, cuts noise in half

July 30, 2002

1 Min Read

DALLAS -- Extending its leadership in high-performance analog and mixed-signal technology, Texas Instruments Incorporated (TI) (NYSE: TXN) announced today a new silicon-germanium (SiGe) complementary bipolar-CMOS manufacturing process that increases speeds up to 3X over other currently available complementary bipolar processes. The new SiGe process is the industry´s first to integrate both NPN- and PNP-type bipolar transistors. This achievement enables a 3X speed increase and a 50 percent noise reduction for operational amplifiers and other high-performance mixed signal products. Designers of high-performance systems such as wireless infrastructure, test and measurement, medical imaging and others will benefit from the faster speeds, lower distortion, wider dynamic range and higher levels of integration offered by the new technology."The BiCom-III process and other new analog processes in development demonstrate TI's commitment to the high performance analog business. BiCom-III gives our engineers the ability to create an awesome array of high performance products - products that customers want, but can't currently get," said Gregg Lowe, senior vice president for TI's high-performance analog business. "This technology, and the ensuing products which will spring from it, strengthens TI's position in the high-performance analog market." The BiCom-III process, developed in TI facilities in Freising, Germany, with contributions from a worldwide TI engineering team, is scheduled for final qualification in third quarter, 2002. Volume manufacturing of BiCom-III products on 200 mm wafers is scheduled by the end of 2002. Texas Instruments Inc.

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