Announced world records in high-frequency ICs at the IEEE International Solid-State Circuits Conference (ISSCC 2002) this week

February 8, 2002

2 Min Read

San Jose, USA / Munich, Germany, -– This week at the IEEE International Solid-State Circuits Conference (ISSCC 2002) Infineon Technologies (FSE/NYSE: IFX), announced several world records in the field of high frequency communication IC’s. The company presented technical papers describing new performance records for 0.12 µm CMOS technology, including a static 25 GHz frequency divider, a 25 Gbit/sec. Multiplexer and a 51 GHz VCO (Voltage Controlled Oscillator), as well as record performance achieved using SiGe (Silicon Germanium) process technology to produce a 45 GHz frequency multiplier.The technology developments reported by Infineon combine advanced circuit design and state-of-the-art fabrication process technology to extend the continuing upward shift in the frequency limits of CMOS (Complementary Metal Oxide Semiconductor) and SiGe process technology. The advances yield higher speeds, enabling greater integration of functions on single chips and, ultimately, reduced costs for advanced communications systems.“These excellent results are clear evidence of Infineon’s performance capability in the global semiconductor market”, said Dr Soenke Mehrgardt, chief technology officer and member of the Infineon management board. “Our 30 R&D locations worldwide and 5,000-plus employees in this area alone provide us with the best prerequisites for providing a continuous flow of innovation.”The papers presented at ISSCC, the highly regarded chip technology conference held from February 3 – 7 in San Francisco, describe how Infineon is accelerating the replacement of the GaAs (Gallium Arsenide) and InP (Indium Phosphide) chips now used in very high-speed data communication systems with SiGe chips that are less costly, more highly integrated and have greater bandwidth. The developments in high frequency CMOS IC technology will make smaller, less costly chips manufactured with this process suitable for applications where SiGe chips are currently required. The papers on high-speed communications presented are summarized below. The first production-level products based on Infineon’s pioneering research results are expected by the beginning of 2003.

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