TORRANCE, Calif. -- Global Communications Semiconductor Inc. (GCS), a pure-play compound semiconductor wafer foundry, today announced that it has made a significant breakthrough in the development of a proprietary InP (Indium Phosphide) HBT foundry process. "The performance advantages of InP HBT are well known. The principal challenge is to provide a high performance technology that is also reliable and manufacturable," remarked Chanh Nguyen, chief technology officer of GCS. "With our proprietary device design and fabrication process technology, we have addressed this challenge in a fundamental way. GCS' proprietary InP HBT technology uses a novel epi design with a carbon-doped base to ensure long-term reliability. GCS has also developed a low-loss interconnect technology for high-speed circuits." GCS' current baseline InP HBT process has 1 micron emitter width with Ft and Fmax above 160 GHz operating at a current density below 75 kA per cm sq. By driving these baseline devices at higher current densities, GCS has demonstrated an Ft above 200 GHz. Another feature of this proprietary process is that the emitter width is scalable to sub micron size.Global Communications Semiconductors Inc. (GCS)