Kopin Ships InGaP HBT Wafers
Kopin supplying indium gallium phosphide heterojunction bipolar transistors wafers for Yokogawa's 40-Gbit/s optical network modules
November 27, 2001
TAUNTON, Mass. -- Kopin Corporation (Nasdaq: KOPN) today announced that it is supplying high-performance indium gallium phosphide (InGaP) heterojunction bipolar transistors (HBTs) to Yokogawa Electric Corporation of Tokyo, Japan. Yokogawa is integrating the HBTs into its advanced 40 gigabit-per-second (Gbps) optical network modules, the world's first modules to use InGaP HBT technology for high-speed OC-768 applications. "Yokogawa's new HBT-based 40 Gbps modules deliver the performance required for the most demanding optical network applications, and greatly expand the opportunities for our gallium arsenide-based HBT products," said Dr. John C.C. Fan, Kopin's president and chief executive officer. "The transistors run at extremely high frequencies, with peak current-gain cutoff frequency (ft) of 190 GHz and maximum frequency of oscillation (fmax) of 230 GHz. Yokogawa's products represent a new milestone, clearly demonstrating how Kopin's InGaP HBTs are moving to higher performance commercial platforms." Kopin Corp.
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