WJ Communications, Inc. (Nasdaq:WJCI) today expanded its highly successful AH200 series of medium- and high-power amplifiers with its first high-power (1 Watt) GaAs FET amplifier, the AH201. The AH201 is the first in a line of high-power driver amplifiers suitable for base stations and wireless infrastructures.

The AH201 is designed to operate from 250 MHz to 3.0 GHz. It provides outstanding dynamic range in a low cost, 6 X 6 mm surface mount package (LPCC). This is an advanced H-pack package design that allows for connections on all four sides, provides for easy solder joint inspection and is easy to assemble in a manufacturing environment. The LPCC offers a superior thermal design by dissipating heat (allows for easy transfer of heat out of the device) and ensures high device reliability. This package is no more than the area of the SOIC-8.

"The introduction of the AH201 high-power driver amplifier is an illustration of WJ's strategic plan to extend its position as a leading supplier of RF Amplifiers, offering innovative new products that have WJ reliability and high performance," stated Skip Hoover, Executive Vice President, Business Development. "Customers have the flexibility to find the right combination of high-power (1 Watt), high-dynamic range, high frequency and low cost for their application."

The AH201 operates from a single supply voltage and is an internally matched device which makes it ideal for both narrow band and broadband applications and is available in the Cellular, PCS, NMT and UMTS bands.

Exceptional thermal design allows the unit to achieve +49 dBm IP3 performance at a mounting temperature of +85 degrees C. The AH201 offers 13 dB of gain and +30 dBm output P1dB.

Samples available in December, production units ready for delivery in January 2002.

WJ Communications Inc. (Nasdaq: WJCI)