WESTLAKE VILLAGE, Calif. -- GTRAN, Inc. announced that it has developed the world's fastest wafer fabrication process based on Indium Phosphide (InP) semiconductors for commercial deployment. Designed to provide a production design platform for the emerging 40Gb/s (OC-768) SONET markets, the process is run on 100mm wafers utilizing highly automated wafer fabrication techniques that are compatible with standard Gallium Arsenide (GaAs) production steps. The InP Heterojunction Bipolar Transistor (HBT) transistor exhibits a ft of 150 GHz and fmax greater than 200 GHz. These key transistor parameters allow the design of opto-electronic integrated circuits that are essential to interface low speed digital circuits to optical components in OC-768 systems.

"We are very pleased that GTRAN has chosen GCS as its production foundry partner for deployment of its InP product. I am excited about the possibilities and business potential that InP adds to the technology and foundry portfolio at GCS," said Dr Owen Wu, President and CEO of Global Communications Systems, Inc. (GCS) located in Torrance, California.

http://www.gtran.com