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Vitesse Teams on InP ICs

Vitesse offers InP HBT foundry services through Mosis, a provider of prototyping and production services for IC development

January 13, 2003

2 Min Read

CAMARILLO, Calif. -- Committed to advancing the use of Indium Phosphide (InP) for IC applications, Vitesse Semiconductor Corp. (Nasdaq:VTSS - News) today announced it is the first company to provide InP HBT foundry services through MOSIS, a leading provider of low-cost prototyping and small-volume production services for IC (and optical IC) development. By working directly with MOSIS, customers will have access to Vitesse's proprietary InP VIP-1(TM) technology. The VIP-1 process includes high performance SHBT devices with other active and passive devices and multiple levels of metal interconnect. This process has been qualified for production usage and has an expected turnaround time for prototype circuits of 13 weeks, which is more than two times faster than competitive technologies such as SiGe. InP foundry services from Vitesse and MOSIS are available today, with quarterly fabrication runs initially planned. The VIP-1 process offers circuit designers the benefits of both high-speed and high-voltage operation suitable for digital, analog, and RF circuits at 10GHz or higher. The process uses four-inch diameter semi-insulating substrates and is designed for high performance and high yield. The key active device is a SHBT, characterized by fT=150GHz, FMAX=150GHz (at IC=1mA/um), and BVCEO in excess of 4.5V. The process also includes resistors and capacitors, and three layers of metal interconnect. Device models and design rules are supported in the Cadence design environment and the robust process supports junction temperatures of 125 degrees Celsius. "Vitesse is building on its past success in the manufacturing of III-V integrated circuits to make a cost-effective InP IC technology available to a broad user base. The access to volume manufacturing capability at a low cost and fast turnaround time is key to the wide spread adoption and usage of InP technology," said Ray Milano, vice president of Physical Media Devices at Vitesse. MOSIS will provide access to device models and design rules as well as reticle composition and overall schedule coordination. The circuit elements provided will include continuously scaleable parameterized cell transistors, resistors and capacitors, and ESD structures. Models are also available in ADS for microwave circuit design activity. Vitesse Semiconductor Corp.

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