BOSTON and OTTAWA -- SiGe Semiconductor today announced that it has signed an agreement with IBM under which SiGe Semiconductor will be granted assignments and licenses to intellectual property associated with IBM power amplifier products. The complete portfolio includes seven devices in various stages of design, which SiGe Semiconductor expects will enhance performance of 2G, 2.5G and 3G cellular handsets. Under a separate agreement with IBM, SiGe Semiconductor is acquiring certain design and test equipment, to be housed at the company's new facilities in the Boston, Massachusetts area. This, combined with a foundry agreement with IBM, under which IBM will manufacture these power amplifier devices for SiGe Semiconductor, will help enable the company to quickly bring these new products to market. The first three power amplifiers for 2G and 2.5G cellular handsets are sampling to lead customers now, sold under SiGe Semiconductor's RangeCharger brand. The roadmap includes GPRS and EDGE capable quad-band GSM power amplifiers for 2.5G mobile handsets, as well as 4x4 matched CDMA power amplifier modules for 2.5G and 3G mobile handsets. "This agreement presents an ideal opportunity to expand our product line and enter new markets where our core expertise in silicon germanium will provide significant advantages to our customers," said Jim Derbyshire, president and CEO, SiGe Semiconductor. "With the broadest selection of silicon germanium power amplifiers on the market, we expect to quickly capture market share, and secure our place among lead competitors." Silicon germanium power amps present major advantages to cellular market SiGe Semiconductor Inc.IBM Corp.