Motorola Touts New Process Technology

0.18 micron Silicon Germanium:Carbon technology for wireless and optical communication products

October 2, 2001

1 Min Read

MINNEAPOLIS -- Motorola, Inc.'s (NYSE: MOT) Semiconductor Products Sector, today at the IEEE's Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), disclosed its next- generation 0.18 micron silicon germanium:carbon (SiGe:C) process technology. This fully modular SiGe:C RF BiCMOS technology has transistors with fmax of 110 GHz providing good RF power gain and low noise for 3G wireless and Gigabit optical communication applications. This technology leverages the heterojunction bipolar transistor (HBT) module from Motorola's previous 0.35-micron BiCMOS generation and uses Motorola's advanced copper backend. The technology also builds on the company's 0.18-micron low power CMOS logic platform and is engineered to support up to five layers of copper metallization. This is Motorola's second-generation technology to offer 1.6 fF/micron2 MIM capacitors, and thin film resistors with excellent mismatch and very low temperature coefficient. "The rapidly growing communications market space places challenging and conflicting demands upon a mixed-signal technology," said Dr. Vida Ilderem, director of RF/IF silicon technologies in Motorola's DigitalDNA(TM) Laboratories. "Motorola has successfully developed a SiGe:C technology to meet the high performance demands of communication products while offering a very cost-effective solution for portable, consumer applications." "Our 0.18 micron SiGe:C technology is targeted at the high performance segment of the wireless subscriber and connectivity markets such as 3G, Bluetooth(TM) 2 transceivers, and 5 GHz wireless LANs. These types of applications will require a combination of high performance RF and high density logic in order to bring leadership products to the consumer," said Behrooz Abdi, vice president and general manager of Motorola's Radio Products Division.Motorola Inc.

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