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Cypress Semiconductor and SiGe Semiconductor to collaborate on an advanced silicon germanium (SiGe) process
December 3, 2001
SAN JOSE, Calif. -- Cypress Semiconductor (NYSE:CY) and SiGe Semiconductor today announced that they have signed an agreement to collaborate on an advanced Silicon Germanium (SiGe) process. Under the agreement, the companies will merge SiGe Semiconductor's RF process and device modeling expertise with Cypress' leading edge BiCMOS and manufacturing capabilities to bring performance, integration and power advantages to manufacturers of wireless and broadband communications equipment. The companies expect to deliver production-ready SiGe processes during the first quarter of 2002. "Developing a SiGe process internally strengthens our position in the communications markets, as the technology is uniquely capable of meeting the growing expectations of this market," said Chris Seams, Cypress's Vice President Technology Development & Wafer Manufacturing. "SiGe Semiconductor is an ideal partner, because their substantial experience in silicon germanium processes enables us to quickly and effectively bring the technology on line and provide superior performance products to our customers."Cypress Semiconductor Corp.SiGe Semiconductor Inc.
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