Screwdinger 12/5/2012 | 1:19:59 AM
re: E2O Stretches VCSEL Range Probably,
Dielectric DBRs for the mirrors,
Intra-cavity contacts for low electrical resistance, and
Gold-plating of the backside via (reqd. for lower dielectric DBR) for low thermal resistance.
vinu 12/4/2012 | 11:17:09 PM
re: E2O Stretches VCSEL Range This is from the report "Lytek Takes On Laser Challenge".....

"In Zhang's view, the second reason for the delay in bringing 1310nm VCSELs to market is the material. Most vendors in the field -- including Agilent, Cielo, and Infineon -- are developing devices based on a material called "gallium arsenide nitride" (GaAsN). "There is a material lifetime problem [with nitrides]," Zhang contends.

Plenty of vendors are betting that these problems can be solved and continue to work on nitride-based devices. These vendors include Emcore Corp. (Nasdaq: EMKR - message board), E2O Communications Inc., Honeywell International Inc. (NYSE: HON - message board), and Picolight. At Photonics West, a number of other research papers will cite progress in this regard. The bottom line, however, is that there's a lot more work to be done than was anticipated."

and this is from the present report.....
"In any event, E2O avoids the nitride issue by using plain indium phosphide (InP), a material already used in edge-emitter (read: "normal") lasers. The lack of nitride means the recipe can be extended to the 1310nm wavelength and even further, to the 1550nm range. "Depending on the relative ratio of those components, you can tune them to different wavelengths," Jiang says."

now either u guys are bluffing about the nitride use or the company executives have taken you for a ride........ what ever the case please do check the facts before u put it on the report......
Pauline Rigby 12/4/2012 | 11:17:08 PM
re: E2O Stretches VCSEL Range Would be interesting to know how E2O overcomes the mirror problem with InP VCSELs -- namely that InP-based mirrors have too low reflectivity, too high electrical resistance and poor thermal conductivity ... any ideas?

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Pauline Rigby 12/4/2012 | 11:17:08 PM
re: E2O Stretches VCSEL Range It should have said "long-wavelength" not "850 nm" and has now been fixed. Should all make sense now.

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rwalkerusa 12/4/2012 | 11:17:08 PM
re: E2O Stretches VCSEL Range Good catch on the inconsistencies.

I wouldn't blame the company. I believe E2O has been focused on InP-based (actually, InGaAsP-based) 1310 VCSELs for several years.

Light Reading just didn't check their facts, mistyped, or doesn't understand the technology.

For anyone in the industry, this quote in the E2O article:

" Many 850nm VCSELs are based on indium gallium arsenide nitride (InGaAsN), and it's the "N" that causes trouble as companies try to apply the recipe at 1310nm, Jiang says. The formula needs more nitride in the mix to create higher-wavelength VCSELs, and the end result is a device with weaker performance and lower reliability.G«•

makes it clear the author of the article mucked it up. 850 nm VCSELG«÷s are based on AlGaAs mirrors with an InGaAs active layer. Noone in their right mind would use InGaAsN at 850 nm. The trick is the fact that you have to use the InGaAsN to extend the mirrors and emission wavelength to the 1310 and 1550 nm ranges. There is no way Mr. Jiang could have been quoted properly by LR.

zzzappp 12/4/2012 | 11:17:02 PM
re: E2O Stretches VCSEL Range >>makes it clear the author of the article mucked >>it up. 850 nm VCSELG«÷s are based on AlGaAs >>mirrors with an InGaAs active layer.

Isn't the active layer in 850 VCSELs typically plain old Gas/AlGaAs quantum wells? Why bother putting Indium in there and straining things?

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