TriQuint Touts UMTS PAM

TriQuint Semiconductor introduces new dual-band UMTS PA module optimized for 3G standards

November 12, 2004

1 Min Read

HILLSBORO, Ore. and MUNICH -- TriQuint Semiconductor, Inc. (Nasdaq/FSE: TQNT) today introduced its new TQM7M60001 dual-band UMTS power amplifier module (PAM) in a small form factor – 4x4x1.1mm. The new module is designed to support cost-effective GSM / EDGE / UMTS (HSDPA*) compressed mode phone architectures with only one antenna. The release comes on the eve of the Electronica trade faire in Munich, November 9-12, where the product will debut.

The new TQM7M6001 power amplifier module is a marketplace breakthrough because its biasing circuit is optimized for low idle current consumption (below 30mA), which results in increased handset talk time in UMTS mode. The TQM7M6001’s output power (27.5dBm min.) offers ample margin for front-end losses, thus enabling cost-effective GSM / EDGE / UMTS multi-mode phone designs utilizing compressed-mode seamless hand-over to the GSM / EDGE global network. Furthermore, its linearity (~7dB margin to ETSI-requirements for UMTS) offers sufficient margin for applying additional transmit channels for large-scale data transmission rates, enabling next generation 3G phones for HSDPA (High Speed Download Packet Access).

“This market-leading UMTS dual-band PAM offers outstanding performance enabling phone designers to meet UMTS system specifications in IMT2100 and PCS frequency bands over bias and temperature range, even for next generation 3G-phones supporting upcoming standards such as compressed-mode hand-over or HSDPA,” said Juergen Hartmann, TriQuint Semiconductor UMTS Product Marketing Manager.

TriQuint Semiconductor Inc.

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