SUNNYVALE, Calif. -- SST Communications, a developer of RF integrated circuits for a wide range of wireless and multimedia applications, and a subsidiary of SST (Silicon Storage Technology, Inc.; Nasdaq: SSTI), a leader in flash memory technology, today introduced the industry's first dual power amplifier for multiple-in-multiple-out (MIMO) WLAN systems. The SST12LP30 provides two amplification channels in the 2.4 GHz band, providing wireless system designers with a cost-effective solution for 802.11b/g devices that utilize a 2x2 (two transmitters and two receivers) architecture. The new power amplifier delivers superior performance through channel matching, maximizes efficiency with on-chip power detection, and lowers bill-of-material costs by eliminating several external components.

"A variety of MIMO products have emerged to address consumer demand for greater wireless performance and to support advanced multimedia applications," said Frank Chang, vice chairman and chief technical advisor, SST Communications. "Our dual power amplifier is the first to help wireless system designers maximize the throughput and range of their MIMO products without a significant impact on design costs. As the industry moves closer to the 802.11n standard, we will continue to enable our customers to capitalize on this growing market by delivering cutting-edge power solutions for the 2.4 and 5 GHz bands."

The SST12LP30 power amplifier provides factory-matched gain and output power (within +/- 0.5dB) on two parallel channels. By eliminating possible power/gain incompatibilities, channel matching can improve performance, reduce engineering time and enable higher-yield production of MIMO devices. To further improve performance, the SST12LP30 provides 20dB of isolation between the two channels, which reduces interference and maintains signal quality for each independent data stream.

The SST12LP30 also features dual on-chip power detectors that not only increase amplifier efficiency and reliability, but also eliminate costly components such as Schottky diode detectors and directional couplers. The built-in power detectors provide a large dynamic range of 20 dB -- with dB-wise linearization and high stability over temperature (<+/-0.3 dB over 0-85 degrees Celsius), frequency (<+/-0.3 dB across Channels 1-14), and output load (<+/-0.4 dB with a 2:1 VSWR [voltage standing wave ratio] mismatch load at all angles).

Silicon Storage Technology Inc. (SST)