Kopin Presents HBT Advances

Kopin presents next-gen HBT results for wireless & fiber optic circuits; company discusses advanced Wafer Engineering techniques

April 12, 2002

1 Min Read

TAUNTON, Mass. -- Kopin Corporation (Nasdaq: KOPN), the leading provider of gallium arsenide (GaAs) heterojunction bipolar transistors (HBTs) for wireless and fiber-optic telecom applications, today will present its latest advancements in the development of InGaP/GaAsInN (GAIN) and InP HBTs at the 2002 GaAs MANTECH Conference in San Diego. The Company has achieved new performance levels for GAIN and InP HBTs by using its advanced Wafer Engineering(TM) technology. "Kopin is using new, advanced approaches to engineer platforms for next-generation power amplifiers and fiber-optic circuits," said Dr. John C.C. Fan, Kopin's president and chief executive officer. "Through a combination of new alloys and band-gap engineering, we are enhancing the performance of HBT structures and providing custom-designed features for new applications. In band-gap engineering, the material compositions are carefully and systematically programmed to controllably grade the energy band gap, which optimizes circuit speed and power efficiency. We are delighted with our rapid progress in improving the HBT transistor performance." Both GAIN and InP HBTs are grown on Kopin's Metalorganic Chemical Vapor Deposition (MOCVD) production platforms using high-volume growth algorithms. The Company will present the results at the GaAs MANTECH Conference today in a technical paper, "Base Layer Band-Gap Engineering for III-V Bipolar Devices." Kopin Corp.

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