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Intense Photonics Partners With IQE

Involves the design, modeling, and growth of complex compound semiconductor crystal structures

January 3, 2002

1 Min Read

HIGH BLANTYRE & CARDIFF, U.K. -- Today, the optoelectronics company Intense Photonics announces a strategic partnership with the III-V wafer specialist IQE. The partnership involves the design, modelling and growth of complex compound semiconductor crystal structures, and will help to shorten Intense Photonics' path to market for its photonic integrated circuits. "Wafer growth is a critical element in our supply chain, and the alliance with IQE is helping to maintain our momentum to full commercial operations, by eliminating the effort and cost involved in setting up this specialist process in house", says Intense Photonics' Jim Ashe, VP Marketing Worldwide. "We chose IQE because of its focus on III-V materials, and the extensive development expertise that it is able to bring to bear to help us maximize yields and performance as we commercialize our quantum well intermixing process for photonic ICs." IQE will be providing gallium arsenide (GaAs) and indium phosphide (InP) based epitaxy structures to support Intense Photonics' work in component sectors including pump lasers and photonic switches, for C and L optical networking frequency bands. "Epitaxy growth of III-V materials requires a great deal of know-how, and we believe our vast experience in compound semiconductor materials will help to give Intense Photonics an edge", says David Thomas, IQE's Business Development Manager. "Our facilities allow us to support customers from development through to volume manufacturing. By working closely with Intense's own engineers, we can rapidly fine-tune structures to optimize device performance and ensure consistent component production." Intense Photonics Ltd.IQE PLC

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