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AXT announces six-inch diameter indium phosphide compound semiconductor substrates
April 24, 2002
FREMONT, Calif. -- AXT, Inc. (Nasdaq: AXTI), a leading manufacturer of compound semiconductor substrates and opto-electronic devices, today announced that it has developed six-inch diameter indium phosphide compound semiconductor substrates. AXT will ship the new six-inch product in sampling quantities in the June quarter. The new six-inch indium phosphide substrates are another extension of the company's proprietary Vertical Gradient Freeze (VGF) crystal growth technology. Through the development and practice of VGF, AXT has led the industry in the production of large diameter compound semiconductor substrates of high uniformity and low defect density. Large diameter compound semiconductor substrates are critical to the production of high performance electronic and opto-electronic integrated circuits, such as radio frequency electronics for cellular and other wireless communication systems and semiconductor lasers for fiber optic and optical networking systems. We believe AXT is the worldwide market share leader in six-inch gallium arsenide and four-inch indium phosphide substrate wafers. "Our VGF technology allows us to produce large diameter substrates with excellent uniformity and low defect density," said Morris Young, president and CEO. "With this major step forward in our technology, our customers can enjoy improved device performance and a better production yield." AXT Inc.
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