Agilent's Tiny PHEMT FET


November 6, 2002

1 Min Read

BÖBLINGEN, Germany -- Agilent Technologies Inc. announced the availability of a new miniature E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) field effect transistor(FET) that combines exceptional RF performance, power efficiency and reliability in a low-cost, highly reliable 2.0 mm x 2.0 mm x 0.75 mm leadless plastic chip carrier package.The new FET, which features third-order output intercept point (OIP3) of+42 dBm, is ideally suited to meet the needs of next-generation 2.5G and3G base stations, which demand very high linearity for accurate signal transmission and high transmission power levels with minimum electrical power consumption and component heat generation.The Agilent ATF-521P8 E-pHEMT FET offers performance optimized for the second and third stages of front-end low noise amplifiers (LNAs), and driver or pre-driver amplifiers in cellular base stations in the 900 MHz, 1.9 GHz and 2.1 GHz frequency bands. It is also ideal for fixed wireless, WLAN and other applications calling for high performance in the 50 MHz to 6 GHz frequency range. The single supply voltage feature eliminates the need for the second supply voltage required for HBT (heterojunction bipolar transistor) and conventional PHEMT devices.Agilent Technologies Inc.

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