ALBUQUERQUE, N.M. -- Skorpios Technologies, Inc., an innovator in silicon photonic technology, today announced demonstration of a full C-band tunable CMOS photonic laser manufactured in a commercial foundry utilizing its proprietary STAB process. The application of this wafer scale integration process results in a photonic CMOS Integrated Circuit (IC) that is planar and hermetically encapsulated. Additionally, the Skorpios CMOS laser IC does not require any costly post-fabrication assembly processes such as flip-chip bonding, turning mirrors, lenses or active alignments. Characterization of the initial devices demonstrates that the laser performance is appropriate for applications from datacenter interconnects to the highest performance coherent long-haul systems supporting data rates exceeding 100 Gb/s. Performance benefits of the laser include narrow linewidth, high side mode suppression, wide tuning range and no requirement for active cooling or hermetic packaging.
Jan HĂ¤glund, Ericsson's Vice President and Head of IP Broadband Networks commented: "By Skorpios delivering the first tunable laser based on its novel process which removes the last barriers towards a CMOS ASIC-like business model for optics, we are a step closer to delivering next generation IP networks that are even lower cost and more scalable than today's. Ericsson's 4G IP portfolio will benefit from this pioneering technology in the coming years."
"It is thrilling to see in the lab the achievements on the silicon embedded tunable laser. This opens a clear path for high photonic integration in a low cost material system fitting ideally to new Metro Access applications," said Dr. Antonio Teixeira, Senior Specialist, Nokia Siemens Networks.
Skorpios Technologies Inc.